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Unlike traditional amorphous phase change materials, niobium telluride exhibits a low melting point and a high crystallization temperature. This unique combination reduces the reset energy and improves the thermal stability of the amorphous phase. The researchers evaluated the switching properties of niobium telluride, which has a significantly reduced operating energy compared to conventional phase-change storage compounds.

The team expects that the new material can retain data for 10 years at temperatures up to 135 ° C, better than the 85' ° C of traditional amorphous phase change materials, indicating niobium telluride has excellent thermal stability and the potential for use in high-temperature environments such as the automotive industry. In addition, niobium telluride also exhibits a fast switching speed of about 30 nanoseconds, further highlighting its potential as a next-generation phase-change memory.